electron conductivity
英 [ɪˈlektrɒn ˌkɒndʌkˈtɪvəti]
美 [ɪˈlektrɑːn ˌkɑːndʌkˈtɪvəti]
电子导电率；电子传导率
双语例句
- When doped with a shallow electron-trap dopant, the electron conductivity of the emulsions increased, while the hole conductivity decreased.
当乳剂中掺入浅电子陷阱掺杂剂[Fe（CN）6]4-时，其电子电导率增大，空穴电导率下降。 - A method for measuring the electron conductivity in mixed conductor is pre-sented.
提出了一种求取混合导电体电子电导率的方法。 - The orders of dependency of the free electron conductivity and the electron hole conductivity on the oxygen partial pressure was-1/ 4 and 1/ 4 at 800 ℃, respectively, which agreed with the Hebb-Wagner equation.
在800℃下，电解质的自由电子电导率以及电子空穴电导率的氧分压级数分别为-1/4和1/4，符合Hebb-Wagner公式。 - Anomalous electron thermal conductivity based on drift wave instabilities
漂移波不稳定性引起的反常电子热导的估计 - With the increase of the temperature, the electron conductivity and hole conductivity decreased.
随着实验温度的增加，乳剂晶体的电子电导率和空穴电导率都下降。 - In addition, a new method to calculate the electron thermal conductivity, the method of forced boundary condition, is discussed, and appears to be feasible.
并讨论了计算电子热导率的一种新方法，即强制边界条件法，结果表明，该方法是可行的。 - In the same time, the dyes receiving a suitable molecular modification also exhibit an electron conductivity and ion selectivity.
同时对它进行恰当的分子修饰能使其具有导电性和离子选择性。 - The electron hole conductivity had no change while free electron conductivity decreased with the increase of the Al_2O_3 content.
随着Al2O3含量的增加，电子空穴电导率变化不明显，自由电子电导率减小。 - The electron thermal conductivity in the HT 7 tokamak is obtained by analyzing the electron power balance.
主要介绍从能量平衡分析来研究HT7托卡马克等离子体电子的热扩散系数。 - The electrical conductivity and electron electrical conductivity of mordenite has been measured. The electrical conductivity and the activation energy of mordenite containing different water and ion-exchanged forms of mordenite have also been measured.
测量了天然丝光沸石的总电导率和电子电导率，不同含水量时的电导率和活化能以及不同交换离子时的电导率和活化能。 - Experimental measurements of electron anomalous heat conductivity on CT-6B Tokamak
CT-6B托卡马克装置反常电子热导测量 - At the beginning of ageing, GP zone was formed with the decomposition of the supersaturated solid solution, electron scattering increased, the electrical conductivity decreased.
时效初期，过饱和固溶体分解形成原子偏聚区，电子散射增加，合金电导率下降。 - In this paper, energy balance in the TCA tokamak plasma with Alfven wave heating is studied, in which the equivalent electron thermal conductivity is determined by using the profile consistency principle. The results are in good agreement with experiments.
本文用剖面不变性确定等效电子热导系数，研究了TCA装置上阿尔芬波加热的能量平衡，结果与实验符合很好。 - Experiment results are an order of magnitude larger than that predicted by neoclassical theory, showing that electron heat conductivity in the CT-6B plasma is an anomalous one.
实验结果比新经典理论值大一个数量级，证明了CT-6B装置等离子体电子热导的反常性。 - The combined effects of the electron thermal conductivity and the impurity radiation on ohmic heating of tokamak plasmas are studied by using a set of simplified energy balance equations.
本文利用欧姆加热条件下简化的能量平衡方程研究了热传导与杂质辐射的综合效应。 - Based on these, the article puts forward the new concept that metal and non-water solution system with electron and ion movement double conductivity should be called the third type of conductor.
双组分相图等主要物化特性，在此基础上提出具有电子迁移和离子迁移双重导电性能的金属非水溶液体系为第三类导体的新概念。 - The precipitation of Al_3 ( Sc, Zr) causes the hardness increasing, at the same time, the depletion of the matrix solid solubility decreases the ability of electron scattering and then increases electrical conductivity of the alloy.
同时，含钪锆过饱和固溶体的分解析出导致基体固溶度的贫化，降低了合金的电子散射能力，合金的电导率升高。 - The results showed that with the increase of the doping amount, the electron conductivity and hole conductivity increased indicating that the shallow electron dopant could restrain the recombination of the electrons and the holes effectively.
结果表明，随掺杂剂用量的增加，晶体的电子电导率和空穴电导率都相应增加，这说明浅电子陷阱掺杂剂的掺杂有效地抑制了电子和空穴的复合。 - Silicon carbide is useful in many fields because it has many advantages such as wide band gap, high broken electric field, fast electron drift velocity, fast thermal conductivity, good thermal stability, good mechanical strength, antioxidant, corrosion-resistant and so on.
碳化硅由于其禁带宽度大、击穿电场高、电子漂移速度大、热导率大、热稳定性、机械强度大、抗氧化、耐腐蚀等优点在众多领域有着广泛的应用。 - Quartz optical fibers coated by ITO films can obtain the property of good photo and electron conductivity, which extends its application in sensor fields.
以石英光导纤维作为ITO薄膜的基体，赋予光纤具备导电/导光/透明的性能，可应用于传感器等相关领域。 - Semi-insulating silicon carbide ( SiC) is an attractive material for application as power compact photoconductive semiconductor switches ( PCSS) due to its large band gap, high critical electric field strength, high electron saturation velocity and high thermal conductivity.
半绝缘SiC由于其宽禁带、高临界击穿电场、高电子饱和漂移速度、高热导率等优良特性，使其非常适合作为大功率光导开关的基体材料。 - However, its low electron conductivity and slow Li-ion diffusion velocity affect its electrochemical properties, which hinder its commercialization process as a cathode material of lithium-ion batteries.
然而由于其极低的本征电子电导率和锂离子扩散系数，影响了其电化学性能，阻碍其作为锂离子电池正极材料的商业化进程。 - Due to their superior intrinsic properties such as the wide band gap, high electron saturation velocity, high thermal conductivity and physical and chemical stability, group III nitrides is suitable for application in high-speed, high-temperature and high-power electronic devices.
这些半导体材料由于具有能隙宽、电子饱和速率高、导热性能好以及物理和化学性质稳定等优良的内在特性，因此适合于制作高速、高温和大功率的电子器件。 - However, its low electron conductivity impairs its electrochemical performance and prevents its applications.
但FeF3极差的导电性严重影响其电化学性能，并阻碍了其应用。 - The simulation results show that the metal which has a bigger electron heat capacity needs more fluence to occur to ablation behavior. The different electron thermal conductivity model is the key to the depth of heat affect zone.
研究发现电子热容较大的金属需要较高的能量才能发生烧蚀行为，而不同的电子热传导率模型对飞秒激光作用下材料的热影响区域深度至关重要。 - Silicon Carbide is being intensely pursued around the world for high temperature, high power, high frequency and high radiation applications because of its wide bandgap, high electric field strength, high saturation electron velocity and high thermal conductivity.
第三代半导体材料碳化硅（SiC）由于具有宽带隙、高临界击穿电场、高热导率以及高载流子饱和漂移速度等优异特性，而广泛应用于高温、大功率、高频、抗辐射等领域。 - Diamond has many advantages compared with other semiconductor materials, such as low dielectric constant, high band gap, good electron hole mobility, high thermal conductivity and optical properties.
金刚石作为宽禁带半导体材料与其它材料相比，具有非常低的介电常数，很高的禁带宽度和极高的热导率及优良的光学性质。 - Gallium nitride material has superior physical properties, such as wide bandgap, high saturation electron drift velocity and high thermal conductivity. It has great potential for application in high temperature, high power and microwaves fields.
GaN半导体材料具有禁带宽度大、电子饱和速度高、导热性能好等优点，在高温、大功率、微波器件领域拥有很大发展潜力。 - In addition, the changes of the parameters ( the temperature, the electron density, the electrical conductivity, the electron thermal conductivity and the electron thermal diffusivity) along the discharge channel in one cloud lightning have been discussed.
另外，分析讨论了一次云闪放电通道各参数（温度、电子密度、电导率、电子的热导率和热扩散系数）沿通道的变化情况。 - Silicon carbide ( SiC), which has large band gaps, high critical breakdown field strength, high electron mobility and good thermal conductivity, is considered as an ideal material to manufacture the optoelectronic integrated device with high temperature, high frequency, high power and radioresistance.
SiC以其特有的大禁带宽度、高临界击穿场强、高电子迁移率、高热导率等特点，成为制造高温、高频、大功率、抗辐照及光电集成器件的理想材料。